CMBTA42 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VCBO

max. 300

200 V

Collector–emitter voltage (open base)

VCEO

max. 300

200 V

Emitter–base voltage (open collector)

VEBO

max.

Collector current (d.c.)

max.

500

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

500

K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

CMBTA42

A43

IC = 1 mA; IB = 0

V(BR)CEO min. 300

200 V

Collector–base breakdown voltage

IC = 100 µA; IE = 0

V(BR)CBO min. 300

200 V

Emitter–base breakdown voltage

IE = 100 µA; IC = 0

V(BR)EBO min.

Collector cut–off current

IE = 0; VCB = 200 V

ICBO

max. 0.1

–

µA

IE = 0; VCB = 160 V

ICBO

max. –

0.1

µA

Emitter cut–off current

IC = 0; VBE = 6 V

IEBO

max. 0.1

–

µA

IC = 0; VBE = 4 V

IEBO

max. –

0.1

µA

Feedback capacitance at f = 1 MHz

IE = 0; VCB = 20 V

Cre

max.

4 pF

Saturation voltages

IC = 20 mA; IB = 2 mA

VCEsat

max.

0.5

IC = 20 mA; IB = 2 mA

VBEsat

max.

0.9

D.C. current gain

IC = 1 mA; VCE = 10 V

hFE

min.

IC = 10 mA; VCE = 10 V

hFE

min.

IC = 30 mA; VCE = 10 V

hFE

min.

Transition frequency at f = 35 MHz

IC = 10 mA; VCE = 20 V

min.

MHz

CMBTA42

CMBTA43

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