2SC5890 datasheet(4/16 Pages) RENESAS

номер детали	2SC5890

подробное описание детали	Silicon NPN Epitaxial UHF / VHF wide band amplifier

PDF	16 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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4 / 16 page

2SC5890

Rev.0, Aug. 2002, page 2 of 14

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

1.5

Collector current

Collector power dissipation

700*

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

*When using alumina ceramic board (25 x 60 x 0.7 mm)

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 10µ A, IE = 0

Collector cutoff current

CBO

—

µA

CB = 12 V, IE = 0

Collector cutoff current

CEO

—

CE = 9 V, RBE = ∞

Emitter cutoff current

EBO

—

µA

EB = 1.5 V, IC = 0

DC current transfer ratio

100

150

200

CE = 5 V, IC = 20 mA

Collector output capacitance

Cob

—

0.9

1.5

CB = 5 V, IE = 0, f = 1 MHz

Reverse transfer capacitance

Cre

—

0.85

—

CB = 5 V, IE = 0, f = 1 MHz

Gain bandwidth product

5.5

7.8

—

GHz

CE = 5 V, IC = 30 mA,

f = 1 GHz

Forward transfer coefficient

S212

—

CE = 5 V, IC = 30 mA,

f = 1 GHz

Power gain

9.5

—

CE = 5 V, IC = 30 mA,

f = 900 MHz

Noise figure

—

1.0

1.9

CE = 5 V, IC = 5 mA,

f = 900 MHz

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