MMM6035 datasheet(4/22 Pages) FREESCALE

4 / 22 page

RF Specifications

MMM6035 Advance Information, Rev. 2.4

Freescale Semiconductor

RF Specifications

Mode Control Input Resistance (High State)

Resistance to GND

Rmci

-250

Ω

Vramp Input Current

VRAMP = 0 V

Vramp = 2.2 V

IRAMP(L)

IRAMP(H)

-0.5

µA

Table 4. Mode GMSK Cellular Band Specifications

(TXIN_LB = 3.0 dBm, VBAT = 3.6 V, VRAMP = 0.1 to 2.2 V pulsed, Period = 4.6 ms, Duty Cycle = 25%, LB_HB = 0 V,

VREG = 2.8 V, TX_EN = 2.8 V, TA = 25°C ±5° C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Operating Frequency

824

849

MHz

Output Power at High VRAMP

PO(H)

34.2

34.9

dBm

Output Power over VRNG, TRNG at High VRAMP

PO(HX)

32.2

dBm

Power Added Efficiency @ PO(H)

PAE

Current Consumption at Low Output Power (PO set to 6.0 dBm)

IDD(L)

150

Forward Isolation (VRAMP = 0 V, TX_EN = 0 V) over VRNG,

TRNG

Iso1

-20

dBm

Harmonics level over VRNG, TRNG

2 F0

3 F0

-10

dBm

Tx Noise in Rx Cellular Band

@ P

O=PO(H) RBW = 100 kHz

NRx1 FRX =

869-894 MHz

-82

dBm

Input VSWR

-16-

Second Harmonic Leakage at DCS/PCS over VRNG, TRNG at

High VRAMP

Xtalk

-15

dBm

Load mismatch stability

All angles

Set Vramp where Po(H)

≤ 34.2 dBm into 50 Ω load

All spurious < -36 dBm, RBW = 3 MHz

VSWR

6:1

Load mismatch ruggedness

All angles

Set Vramp where Po(H)

≤ 34.2 dBm into 50 Ω load

No damage, no degradation

VSWR

20:1

Power Control Range over VRNG, TRNG

RPC

Table 3. DC Characteristics (continued)

(VREG = 2.6 to 3 V, TA = -20 to 85° C)

Characteristic

Symbol

Min

Typ

Max

Unit

MMM6035 датащи(PDF) 4 Page - Freescale Semiconductor, Inc

MMM6035 датащи(HTML) 4 Page - Freescale Semiconductor, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

датащи скачать

ссылки URL