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MMM6025 датащи(PDF) 8 Page - Freescale Semiconductor, Inc |
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MMM6025 датащи(HTML) 8 Page - Freescale Semiconductor, Inc |
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8 / 16 page ![]() MMM6025 Advance Information, Rev. 5.1 8 Freescale Semiconductor RF Specifications Power Detector Voltage1 Low Power High Power VDET(low) VDET(high) 40 1.0 - - 150 2.05 mV V Harmonics6 (Pout Max = 33 dBm) 2f0 – 15f0 - - -33 dBm GSM850 RX Band Noise5,6 (Pout = 33 dBm) nRX - - -84 dBm/ 100 kHz Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C) Po_ot(min) 31.5 - - dBm Insertion Loss from Antenna to RX_GSM8506 IL_RX - - 1.4 dB Tx - Rx Isolation6 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS 27 27 27 27 - - - - - - - - dB Input VSWR VSWR - - 2:1 Power Out Change due to Coupling Variations (VSWR =3:1 @ ANT Port)7 CPLV -1.5 - 1.5 dB Load Mismatch Stress (Ruggedness)8 Rugg No performance degradation and no module damage Stability - Spurious Output9 Stab - - –36 dBm Closed Loop Power Variation over Temperature10 Pout_Temp Ambient 1 Pout = 6 dBm Pout_Temp Ambient 2 Pout = 20 dBm Pout_Temp Ambient 3 Pout = 33 dBm -1.5 dB 1.0 dB -0.5 dB - - - 1.5dB 1.0 dB 0.5 dB dB dB dB 1 Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) 2 Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C 3 Measurement made from 50% of V APC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port: ISO1: P in = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) 5 GSM850 RX band = 869 to 894 MHz. Vdd = 4.2 V, Saturated P out. 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P out = 33 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 33dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 33dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF] Table 7. GSM850 Band Specifications (continued) Characteristic Symbol Min Typ Max Unit |
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