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IRFP250A датащи(PDF) 4 Page - Thinki Semiconductor Co., Ltd.

номер детали IRFP250A
подробное описание детали  ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs
PDF  7 Pages
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производитель  THINKISEMI [Thinki Semiconductor Co., Ltd.]
домашняя страница  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

IRFP250A датащи(HTML) 4 Page - Thinki Semiconductor Co., Ltd.

  IRFP250A Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. IRFP250A Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd. IRFP250A Datasheet HTML 3Page - Thinki Semiconductor Co., Ltd. IRFP250A Datasheet HTML 4Page - Thinki Semiconductor Co., Ltd. IRFP250A Datasheet HTML 5Page - Thinki Semiconductor Co., Ltd. IRFP250A Datasheet HTML 6Page - Thinki Semiconductor Co., Ltd. IRFP250A Datasheet HTML 7Page - Thinki Semiconductor Co., Ltd.  
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© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 4/7
Rev.10T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※ No te s :
1 . Z
θ JC (t) = 0 . 6 1
℃ /W M a x .
2 . D u ty F a c to r, D = t
1 /t 2
3 . T
JM
- T
C
= P
DM
* Z
θ JC (t)
s in g le p u ls e
D= 0 .5
0. 02
0. 2
0. 05
0. 1
0. 01
t
1 , S q uar e
W a v e P u ls e D u r a tio n [s ec ]
25
50
75
100
125
150
0
5
10
15
20
25
30
35
T
C, Case Temperature [
℃]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
µs
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C
= 25
o
C
2. T
J = 150
o
C
3. Single Pulse
V
DS, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V
GS = 10 V
2. I
D = 16 A
T
J, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※Notes:
1. V
GS = 0 V
2. I
D = 250
μ A
T
J, Junction Temperature [
o
C]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
PDM
t
2
IRFP250A



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