© 2000 IXYS All rights reserved

1 - 4

V

RSM

V

RRM

Type

V

DSM

V

DRM

VV

1300

1200

MCC 255-12io1

MCD 255-12io1

1500

1400

MCC 255-14io1

MCD 255-14io1

1700

1600

MCC 255-16io1

MCD 255-16io1

1900

1800

MCC 255-18io1

MCD 255-18io1

Symbol

Test Conditions

Maximum Ratings

I

T

450

A

I

T

250

A

I

T

t = 10 ms (50 Hz)

9000

A

V

t = 8.3 ms (60 Hz)

9600

A

T

t = 10 ms (50 Hz)

7800

A

V

t = 8.3 ms (60 Hz)

8600

A

T

t = 10 ms (50 Hz)

405 000

V

t = 8.3 ms (60 Hz)

382 000

T

t = 10 ms (50 Hz)

304 000

V

t = 8.3 ms (60 Hz)

307 000

(di/dt)

cr

T

repetitive, I

100

A/

ms

f =50 Hz, t

V

I

non repetitive, I

500

A/

ms

di

(dv/dt)

cr

T

V

1000

V/

ms

R

P

GM

T

t

30

ms

120

W

I

t

W

P

GAV

20

W

V

RGM

10

V

T

VJ

-40...+130

°C

T

VJM

130

°C

T

stg

-40...+125

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

3000

V~

I

t = 1 s

3600

V~

M

d

Mounting torque (M6)

4.5-7/40-62 Nm/lb.in.

Terminal connection torque (M8)

11-13/97-115 Nm/lb.in.

Weight

Typical including screws

750

g

Features

q

International standard package

q

Direct copper bonded Al

with copper base plate

q

Planar passivated chips

q

Isolation voltage 3600 V~

q

UL registered E 72873

q

Keyed gate/cathode twin pins

Applications

q

Motor control, softstarter

q

Power converter

q

Heat and temperature control for

industrial furnaces and chemical

processes

q

Lighting control

q

Solid state switches

Advantages

q

Simple mounting

q

Improved temperature and power

cycling

q

Reduced protection circuits

I

TRMS

= 2x 450 A

I

TAVM

= 2x 250 A

V

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

MCC 255

MCD 255

Thyristor Modules

Thyristor/Diode Modules

1

2

3

76

5

4

MCD

MCC

36 7 1

5 4 2

31

5 4 2