PD618BA datasheet(2/8 Pages) UNIKC

2 / 8 page

PD618BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.7

2.3

±100

4.3

3.3

5.5

1435

259

162

1.3

28.3

15.4

3.5

7.7

1.2

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 40A.

Forward Transconductance

VGS = 4.5V, ID = 15A

VDS = 20V, VGS = 0V , TJ = 125 °C

PARAMETER

SYMBOL

VGS = 0V, VDS = 15V, f = 1MHz

Gate-Body Leakage

VGS(th)

Input Capacitance

Qgd

Output Capacitance

Qg(VGS=10V)

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

gfs

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Ciss

VDS = 5V, ID = 20A

TEST CONDITIONS

VDS = 15V , ID = 20A

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

IF = 20A, VGS = 0V

STATIC

Drain-Source Breakdown Voltage

UNITS

V(BR)DSS

LIMITS

VGS = 0V, ID = 250mA

VSD

trr

Qgs

DYNAMIC

mΩ

IF = 20A, dlF/dt = 100A / mS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

VDS = 24V, VGS = 0V

Qrr

VDS = 15V ,

ID @ 20A, VGS = 10V, RGEN =6Ω

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=4.5V)

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V , ID = 20A

REV 1.0

2016/4/13

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