PC561BA datasheet(2/8 Pages) UNIKC

номер детали	PC561BA

подробное описание детали	P-Channel Enhancement Mode MOSFET

PDF	8 Pages

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производитель	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

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PC561BA

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-30

-1.3

-1.6

-2.3

±100

-1

-10

585

1.5

3.3

-2

-1.1

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Reverse Recovery Time

IF = -4A, dlF/dt = 100A / mS

VSD

Fall Time

Forward Voltage

TEST CONDITIONS

mΩ

Drain-Source On-State

Resistance

RDS(ON)

VGS = -10V, ID = -4A

VDS = -20V, VGS = 0V , TJ = 55 °C

VDD = -15V, VGS = -10V

ID @ -4A, RGS = 6Ω

td(on)

td(off)

Output Capacitance

Gate-Drain Charge

Gate-Source Charge

Qrr

Reverse Recovery Charge

Continuous Current

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

IF = -4A, VGS = 0V

VGS = 0V, VDS = -15V, f = 1MHz

Reverse Transfer Capacitance

trr

Drain-Source Breakdown

Voltage

VGS = -4.5V, ID = -4A

VDS = -5V, ID = -4A

VGS(th)

Forward Transconductance

VGS = 0V, ID = -250mA

V(BR)DSS

Qg(VGS= -4.5V)

Ciss

Coss

Crss

Qgd

Qgs

gfs

Gate Threshold Voltage

DYNAMIC

IGSS

VDS = -24V, VGS = 0V

Gate-Body Leakage

Input Capacitance

IDSS

VDS = VGS, ID = -250mA

VDS = 0V, VGS = ±20V

Zero Gate Voltage Drain Current

STATIC

LIMITS

UNITS

PARAMETER

SYMBOL

Total Gate Charge

VDS = -15V , VGS =-10V,

ID = -4A

Qg(VGS= -10V)

REV 1.0

2016/5/31

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