IXTP5N50P datasheet(1/5 Pages) IXYS

номер детали	IXTP5N50P

подробное описание детали	PolarHV Power MOSFET - N-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

G = Gate

D = Drain

S = Source

TAB = Drain

DS99446(08/05)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 μA

500

V

GS(th)

V

DS

= V

GS, ID = 50μA

3.0

5.0

V

I

GSS

V

GS

=

±30 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

5

μA

V

GS = 0 V

T

J = 125°C50

μA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

1.4

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

Advance Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

IXTA 5N50P

IXTP 5N50P

IXTY 5N50P

V

DSS

= 500 V

I

D25

= 4.8 A

R

DS(on) ≤

≤≤≤≤ 1.4 Ω

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C

= 25

°C

4.8

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

10

A

I

AR

T

C

= 25

°C5

A

E

AR

T

C

= 25

°C20

mJ

E

AS

T

C

= 25

°C

250

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 20 Ω

P

D

T

C

= 25

°C89

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum tab temperature for soldering

260

°C

TO-263 package for 10s

M

d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-263

3

g

TO-252

0.8

g

TO-263 (IXTA)

G

S

(TAB)

TO-220 (IXTP)

D

(TAB)

G

S

TO-252 (IXTY)

G

S

(TAB)

Аналогичный номер детали - IXTP5N50P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTP5N50P	130Kb / 5P	N-Channel Enhancement Mode Avalanche Rated
Inchange Semiconductor ...	IXTP5N50P	295Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - IXTP5N50P

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GTM CORPORATION	G2N7002K	368Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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	GE40N03	251Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IXYS Corporation	IXTA8N50P	228Kb / 5P	PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXYS Corporation	IXTA4N80P	178Kb / 4P	PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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IXTP5N50P датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXTP5N50P

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