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IXSH45N100 датащи(PDF) 2 Page - IXYS Corporation

номер детали IXSH45N100
подробное описание детали  Low VCE(sat) IGBT - Short Circuit SOA Capability
PDF  4 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXSH45N100 датащи(HTML) 2 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90; VCE = 10 V,
20
25
S
Pulse test, t
£ 300 ms, duty cycle d £ 2 %
I
C(on)
V
GE = 15 V, VCE = 10 V
195
A
C
ies
4150
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
300
pF
C
res
60
pF
Q
g
165
260
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
40
60
nC
Q
gc
80
200
nC
t
d(on)
80
ns
t
ri
150
ns
t
d(off)
400
ns
t
fi
1000
1500
ns
E
off
15
mJ
t
d(on)
100
ns
t
ri
300
ns
E
on
5.4
mJ
t
d(off)
550
900
ns
t
fi
2200
2900
ns
E
off
25
mJ
R
thJC
0.42 K/W
R
thCK
0.25
K/W
Inductive load, T
J = 25°C
I
C = IC90, VGE = 15 V, L = 100 mH
V
CE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Inductive load, T
J = 125°C
I
C = IC90, VGE = 15 V, L = 100 mH
V
CE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times
may increase for
V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
IXSH 45N100
IXSM 45N100
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AE (IXSM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
- 22.22
- 0.875
C
6.40 11.40
0.252 0.449
D
1.45
1.60
0.057 0.063
E
1.52
3.43
0.060 0.135
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 26.66
0.991 1.050
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025



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