IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXGH 50N60B IXGK 50N60B

IXGJ 50N60B IXGT 50N60B

R

0

1020304050

60

0

2

4

6

8

10

12

0

1

2

3

4

5

6

Pulse Width - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

D=0.02

V

0

100

200

300

400

500

600

0.1

1

10

100

Q

0

40

80

120

160

200

0

4

8

12

16

I

0

20406080

100

0

2

4

6

8

10

12

0

1

2

3

4

5

6

V

I

E

(ON)

E

(OFF)

E

(ON)

E

(OFF)

T

R

dV/dt < 5V/ns

D=0.1

D=0.05

Single pulse

D = Duty Cycle

T

600

E

(OFF)

D=0.2

D=0.5

D=0.01

R

I

T

I

I

E

(ON)

E

(ON)

E

(OFF)

Figure 7. Dependence of E

Figure 8. Dependence of E

Figure 9. Gate Charge

Figure 10. Turn-off Safe Operating Area

Figure 11. IGBT Transient Thermal Resistance