IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXGA12N60C

IXGP12N60C

Fig. 11. Transient Thermal Resistance

Fig. 8. Dependence of E

Fig. 7. Dependence of E

Fig. 9. Gate Charge

Fig. 10. Turn-off Safe Operating Area

Pulse Width - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

V

0

100

200

300

400

500

600

0.1

1

10

100

Q

0

1020

3040

50

0

4

8

12

16

R

0

102030405060

0

1

2

3

0.0

0.5

1.0

1.5

I

0

5

10

15

20

25

0

1

2

3

0.0

0.5

1.0

1.5

V

I

I

E

(ON)

E

(OFF)

T

R

dV/dt < 5V/ns

D=0.5

D=0.1

D=0.05

D=0.01

Single pulse

D = Duty Cycle

R

T

24

E

(ON)

I

E

(OFF)

T

E

(ON)

I

E

(ON)

E

(OFF)

E

(OFF)

D=0.2

D=0.02