IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700

Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030

Fax: +49-6206-503629

I

XYS reserves the right to change limits, test conditions, and dimensions.

IXFN 58N50

IXFN 61N50

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

DSS

V

500

V

V

GS(th)

V

,

I

1.7

4.0

V

I

GSS

V

±200

nA

I

DSS

V

T

500

µA

V

T

2

mA

R

DS(on)

V

58N50

85 m

Ω

61N50

75 m

Ω

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

500

V

V

DGR

T

J

= 25°C to 150°C; R

500

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

IXFN 58N50

58

A

IXFN 61N50

61

A

I

DM

T

IXFN 58N50

232

A

IXFN 61N50

244

A

P

D

T

625

W

T

J

-40 ... +150

°C

T

JM

150

°C

T

stg

-40 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 minute

2500

V~

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque (M4)

1.5/13

Nm/lb.in.

Weight

30

g

E

AR

75

mJ

4

2

1

3

miniBLOC, SOT-227 B

1 = Source

2 = Gate

3 = Drain

4 = Source

V

DSS

I

D25

R

DS(on)

IXFN 58N50

500V

58A

85 m

Ω

IXFN 61N50

500V

61A

75 m

Ω

Preliminary Data Sheet

High Current Power MOSFET

N-Channel Enhancement Mode

Features

• International standard package

• Isolation voltage 3000V (RMS)

• Low R

• Rugged polysilicon gate cell structure

• Low drain-to-case capacitance

(<60 pF)

- reduced RFI

• Low package inductance (< 10 nH)

- easy to drive and to protect

• Aluminium Nitride Isolation

- increased current ratings

Applications

• DC choppers

• AC motor speed controls

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched mode and resonant mode

power supplies

Advantages

• Easy to mount

• Space savings

• High power density

©1996 IXYS Corporation. All rights reserved.

92810G (10/95)