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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

24

34

S

C

iss

3900

pF

C

oss

V

GS

= 0 V, V

760

pF

C

rss

320

pF

t

d(on)

23

ns

t

r

V

GS

= 10 V, V

30

ns

t

d(off)

R

90

ns

t

f

28

ns

Q

g(on)

230

nC

Q

gs

V

GS

= 10 V, V

42

nC

Q

gd

110

nC

R

thJC

0.45

K/W

R

thCK

0.24

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

46

A

I

SM

Repetitive; pulse width limited by T

JM

180

A

V

SD

I

1.8

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

260

590

ns

Q

rr

2.34

7.2

uC

TO-247 AD (IXTH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

IRFP 260

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025