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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TK4P60DB датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TK4P60DB датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor TK4P60DB · FEATURES · Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) · Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 3.7 A IDM Drain Current-Single Pulsed 14.8 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.56 ℃ /W |
Аналогичный номер детали - TK4P60DB |
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Аналогичное описание - TK4P60DB |
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