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FS32K112BHTXVLUTR датащи(PDF) 27 Page - NXP Semiconductors

номер детали FS32K112BHTXVLUTR
подробное описание детали  Low-power Arm Cortex-M4F/M0 core with excellent energy efficiency
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS32K112BHTXVLUTR датащи(HTML) 27 Page - NXP Semiconductors

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The following table shows the power consumption targets for S32K148 in various mode
of operations measure at 3.3 V.
Table 15. Power consumption at 3.3 V
Chip/Device
Ambient
Temperature
(°C)
RUN@80 MHz (mA)
HSRUN@112 MHz (mA)1
Peripherals
enabled +
QSPI
Peripherals
enabled +
ENET + SAI
Peripherals
enabled +
QSPI
Peripherals
enabled +
ENET + SAI
S32K148
25
Typ
67.3
79.1
89.8
105.5
85
Typ
67.4
79.2
95.6
105.9
Max
82.5
88.2
109.7
117.4
105
Typ
68.0
79.8
96.6
106.7
Max
80.3
89.1
109.0
119.0
125
Max
83.5
94.7
NA
1. HSRUN mode must not be used at 125°C. Max ambient temperature for HSRUN mode is 105°C.
4.8 ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
− 4000
4000
V
1
VCDM
Electrostatic discharge voltage, charged-device model
2
All pins except the corner pins
− 500
500
V
Corner pins only
− 750
750
V
ILAT
Latch-up current at ambient temperature of 125 °C
− 100
100
mA
3
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
4.9 EMC radiated emissions operating behaviors
EMC measurements to IC-level IEC standards are available from NXP on request.
General
S32K1xx Data Sheet, Rev. 12, 02/2020
NXP Semiconductors
27



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