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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MIC23156 датащи(PDF) 4 Page - Microchip Technology |
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MIC23156 датащи(HTML) 4 Page - Microchip Technology |
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4 / 32 page  MIC23156 DS20005919A-page 4 2017 Microchip Technology Inc. TABLE 1-1: ELECTRICAL CHARACTERISTICS(1) Electrical Specifications: unless otherwise specified, TA = +25°C; AVIN = PVIN = VEN = VVI2C = 3.6V; L = 1.0 µH; COUT = 2.2 µF. Boldface values indicate –40°C TJ +125°C. Symbol Parameter Min. Typ. Max. Units Test Conditions VIN Supply Input Voltage Range 2.7 — 5.5 V— ENLOW Enable Logic Pin Low Threshold — — 0.5 V Logic low ENHIGH Enable Logic Pin High Threshold 1.2 — — V Logic high IVSEL_LO VSEL Logic Pin Low Threshold — — 0.3 x VI2C V Logic low IVSEL_HI VSEL Logic Pin High Threshold 0.7 x VI2C — — V Logic high IEN Logic Pin Input Current — 0.1 2 µA Pins: EN and VSEL UVLO Undervoltage Lockout Threshold 2.45 2.55 2.65 V Rising UVLO_HYS Undervoltage Lockout Hysteresis — 75 — mV Falling TSHD Shutdown Temperature (Threshold) —160 — °C — TSHD_HYST Shutdown Temperature Hysteresis —20 — °C — ISHDN Shutdown Supply Current — 0.1 5 µA VEN = 0V DC-to-DC Converter VOUT Output Voltage Accuracy –1.5 — +1.5 % VOUT = 1V, IOUT = 10 mA IQ Quiescent Supply Current — 30 50 µA IOUT = 0 mA, VFB > 1.2 * VOUT VOUT Output Voltage Range 0.7 — 2.4 V VOUT/VOUT Output Voltage Line Regulation — 0.02 — %/V 3.0V < VAVIN < 4.5V, ILOAD = 10 mA VOUT/VOUT Output Voltage Load Regulation — 0.04 — % 20 mA < IOUT < 1A RSWON Switch-On Resistance —0.17 — Ω ISW = +100 mA, high-side switch PMOS (QFN) —0.15 — ISW = +100 mA, high-side switch PMOS (WLCSP) —0.15 — ISW = –100 mA, low-side switch NMOS (QFN) —0.13 — ISW = –100 mA, low-side switch NMOS (WLCSP) ILIM Current Limit (DC Value) 1.7 2.9 5.1 A VOUT = 1V fSW Oscillator Switching Frequency — 3 — MHz — DMAX Maximum Duty Cycle 80 — — % Frequency = 3 MHz — DVS Step-Size — 19 — mV — tSS Soft Start Time — 250 — µs VOUT = 90%, CSS = 120 pF Note 1: Specifications are for packaged product only. |
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