RN2113 datasheet(1/5 Pages) TOSHIBA

номер детали	RN2113

подробное описание детали	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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RN2112,RN2113

2001-06-07

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2112,RN2113

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1112, RN1113

Equivalent Circuit

Maximum Ratings (Ta = 25

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−100

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

Electrical Characteristics (Ta = 25

°°°°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

―

VCB = −50V, IE = 0

―

−100

nA

Emitter cut-off current

IEBO

―

VEB = −5V, IC = 0

―

−100

nA

DC current gain

hFE

―

VCE = −5V, IC = −1mA

120

―

400

―

Collector-emitter saturation voltage

VCE (sat)

―

IC = −5mA, IB = −0.25mA

―

−0.1

−0.3

V

Transition frequency

fT

―

VCE = −10V, IC = −5mA

―

200

―

MHz

Collector output capacitance

Cob

―

VCB = −10V, IE = 0, f = 1MHz

―

3

6

pF

RN2112

15.4

22

28.6

Input resistor

RN2113

R1

―

32.9

47

61.1

kΩ

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4mg

Unit: mm

Аналогичный номер детали - RN2113

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	RN2113ACT	159Kb / 6P	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
	RN2113CT	141Kb / 6P	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
	RN2113FT	84Kb / 3P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
	RN2113MFV	297Kb / 6P	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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Аналогичное описание - RN2113

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	RN2201	260Kb / 6P	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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	RN1410	260Kb / 5P	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
	RN1210	252Kb / 4P	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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