AF9902M

2N and 2P-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Sep 22, 2005

2/8

Absolute Maximum Ratings

Symbol

Parameter

N-Channel P-Channel

Units

Drain-Source Voltage

30

-30

Gate-Source Voltage

±12

±12

V

4.3

-3.3

3.4

-2.6

A

20

-20

A

Total Power Dissipation

1.38

W

Linear Derating Factor

0.01

W/ºC

Storage Temperature Range

-55 to 150

ºC

Operating Junction Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

Parameter

Value

Units

Max.

90

ºC/W

Limits

Symbol

Parameter

Test Conditions

CH

Min.

Typ.

Max.

Unit

N

30

-

-

Drain-Source breakdown Voltage

P

-30

-

-

V

Reference to 25 ºC,

N

-

0.03

-

Breakdown Voltage Temperature

Coefficient

Reference to 25 ºC,

P

-

-0.02

-

V/ºC

-

-

40

-

-

50

N

-

-

60

-

-

70

-

-

90

Static Drain-Source

P

-

-

120

mΩ

N

0.5

-

-

Gate-Threshold Voltage

P

-0.5

-

-

V

N

-

13

-

Forward Transconductance

P

-

8

-

S

-

-

1

N

-

-

25

-

-

-1

Drain-Source Leakage

Current

P

-

-

-25

uA

N

-

-

±100

Gate-Source Leakage

P

-

-

±100

nA

N

-

9

15

P

-

10

16

N

-

1.6

-

Gate-Source Charge

P

-

2

-

N

-

4

-

Gate-Drain (“Miller”) Charge

N-Channel

P-Channel

P

-

3

-

nC