12N06G-TN3-R datasheet(1/8 Pages) VBSEMI

номер детали	12N06G-TN3-R

подробное описание детали	N-Channel 60 V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•100 % Rg and UIS Tested

•

Material categorization:

For definitions of compliance please see

APPLICATIONS

• DC/DC Converters

•

DC/AC Inverters

•

Motor Drives

Notes:

a. Duty cycle

 1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR-4 material).

d. Base on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

Qg (Typ.)

60

0.073 at VGS = 10 V

18.2

19.8

0.085 at VGS= 4.5 V

13.2

TO-252

S

G

D

Drain Connected to Tab

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

16.9

A

TC = 70 °C

13.6

Pulsed Drain Current (t = 300 µs)

IDM

25

Avalanche Current

IAS

15

Single Avalanche Energya

L = 0.1 mH

EAS

11.25

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

41.7b

W

TA = 25 °C

c

2.1

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)c

RthJA

60

°C/W

Junction-to-Case (Drain)

RthJC

3

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12N06G-TN3-R

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