2SC2712 datasheet(1/3 Pages) YFWDIODE

номер детали	2SC2712

подробное описание детали	NPN Transistors

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производитель	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

домашняя страница	http://www.yfwdiode.com/

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1 / 3 page

2SC2712 SOT-23

1 / 3

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

Features

High voltage and high current: VCEO = 50 V, IC = 150 mA (max)

Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

High hFE: hFE = 70 700

Low noise: NF = 1dB (typ.), 10dB (max)

Absolute Maximum Ratings Ta = 25

ti

n

U

g

n

it

a

R

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

V

e

g

a

tl

o

v

e

s

a

b

-

r

o

t

c

e

ll

o

C

CBO

60

V

e

g

a

tl

o

v

r

e

tt

i

m

e

-

r

o

t

c

e

ll

o

C

CEO

50

V

e

g

a

tl

o

v

e

s

a

b

-

r

e

tt

i

m

E

EBO

5

V

I

t

n

e

r

u

c

r

o

t

c

e

ll

o

C

150

mA

I

t

n

e

r

u

c

e

s

a

B

30

mA

P

n

o

it

a

p

i

s

i

d

r

e

w

o

p

r

o

t

c

e

ll

o

C

150

mW

5

2

1

j

T

e

r

u

t

a

r

e

p

m

e

t

n

o

it

c

n

u

J

T

e

g

n

a

r

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55 to +125

Electrical Characteristics Ta = 25

hFE Classification

Type

2SC2712-O

2SC2712-Y

2SC2712-G

2SC2712-L

Range

70-140

120-240

200-400

350-700

Marking

LO

LY

LG

LL

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

50

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 60 V , IE= 0

100

Emitter cut-off current

IEBO

VEB= 5V , IC=0

100

Collector-emitter saturation voltage

VCE(sat) IC=100 mA, IB=10mA

0.25

Base - emitter saturation voltage

VBE(sat) IC=100 mA, IB=10mA

1.2

DC current gain

hFE

VCE= 6V, IC= 2mA

70

700

Noise figure

NF

VCE = 6 V, IC = 0.1 mA ,

f = 1KHz,RG=10KΩ

1

10

dB

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

2

3.5

pF

Transition frequency

fT

VCE= 10V, IC= 1mA

80

MHz

V

nA

V

NPN Transistors

1

2

3

1.Base

2.Emitter

3.Collector

■

Simplified outline(SOT-23)

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