TP5335 datasheet(3/12 Pages) MICROCHIP

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DS20005704B-page 3

TP5335

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = TJ = 25°C unless otherwise specified. Specification is obtained by characterization

and is not 100% tested.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Forward Transconductance

GFS

125

—

mmho VDS = –25V, ID = –200 mA

Input Capacitance

CISS

—

110

VGS = 0V, VDS = –25V,

f = 1 MHz

Common Source Output

Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON)

—

VDD = –25V, ID = –150 mA,

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

–1.8

VGS = 0V, ISD = –200 mA

(Note 1)

Reverse Recovery Time

trr

—

800

—

VGS = 0V, ISD = –200 mA

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.(Pulse test: 300 µs pulse, 2% duty

cycle.)

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Junction Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-23

JA

—

203

—

°C/W

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(mA)

Power Dissipation at

TA = 25°C

(W)

IDR (Note 1)

(mA)

IDRM

(mA)

3-lead SOT-23

–85

–400

0.36

–85

–400

Note 1: ID (continuous) is limited by maximum TJ.

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