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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFBG20 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFBG20 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor IRFBG20 · FEATURES · Low drain-source on-resistance: RDS(ON) = 11Ω (MAX) · Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 5.6 A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.3 ℃ /W |
Аналогичный номер детали - IRFBG20 |
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Аналогичное описание - IRFBG20 |
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