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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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3N150S датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3N150S датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 3N150S · FEATURES · Drain Current ID= 2.5A@ TC=25℃ · Drain Source Voltage- : VDSS= 1500V(Min) · Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) · Fast Switching · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching power supplies,converters,AC and DC motor controls · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Plused 10 A PD Total Dissipation @TC=25℃ 63 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2 ℃ /W |
Аналогичный номер детали - 3N150S |
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Аналогичное описание - 3N150S |
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ссылки URL |
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