2SB1261-Z datasheet(1/2 Pages) ISC

номер детали	2SB1261-Z

подробное описание детали	isc Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistors

2SB1261-Z

DESCRIPTION

·

Low Collector Saturation Voltage

·

High Power Dissipation-

: PC= 10W(Max)@TC=25℃

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in audio amplifier and switching,

especially in hybrid integrated circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-3

A

PC

Collector Power Dissipation

@TC=25℃

10

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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