BFS520 datasheet(4/7 Pages) YFWDIODE

номер детали	BFS520

подробное описание детали	NPN Transistor

PDF	7 Pages

Scroll/Zoom	100%

производитель	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

домашняя страница	http://www.yfwdiode.com/

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4 / 7 page

BFS520 SOT-323

4 / 7

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

■

Typical Characterisitics

Fig.7 Gain as a function of frequency.

IC = 5 mA; VCE = 6 V; Tamb = 25 °C.

handbook, halfpage

10−1

10−2

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.8 Gain as a function of frequency.

IC = 20 mA; VCE = 6 V; Tamb = 25 °C.

10−1

10−2

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.9 Minimum noise figure as a function of

collector current.

VCE = 6 V; Tamb = 25 °C.

handbook, halfpage

IC (mA)

(dB)

900 MHz

500 MHz

f = 2 GHz

Fig.10 Minimum noise figure as a function of

frequency.

VCE = 6 V; Tamb = 25 °C.

10−1

(dB)

5 mA

I = 20 mA

f (GHz)

Fig.11 Noise circle.

IC = 5 mA; VCE = 6 V;

f = 900 MHz; Zo = 50 Ω.

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2

0.5

180°

−

135°

−

90°

−

45°

0°

45°

90°

135°

stability

circle

pot. unst.

region

F = 3 dB

F = 2 dB

F = 1.5 dB

ΓOPT

Fmin = 1. 1 dB

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