2SC2383 datasheet(1/2 Pages) YFWDIODE

номер детали	2SC2383

подробное описание детали	NPN Transistors

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производитель	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

домашняя страница	http://www.yfwdiode.com/

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2SC2383 SOT-89

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

Product-Rank

2SC2383-O

2SC2383-Y

Range

100~200

160~320

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

160

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6

V

Collector Current-Continuous

IC

1

A

Collector Power Dissipation

PC

0.5

mW

Junction & Storage Temperature

TJ, TSTG

150, -55~150

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-Base Breakdown Voltage

V(BR)CBO

160

-

V

IC=0.1mA, IE=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

160

-

V

IC=10mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

6

-

V

IE=10µA, IC=0

Collector Cut-Off Current

ICBO

-

1

µ

A

VCB=150V, IE=0

Emitter Cut-Off Current

IEBO

-

1

µ

A

VEB=6V, IC=0

DC Current Gain

hFE

100

-

320

VCE=5V, IC=200mA

Collector-Emitter Saturation voltage

VCE(sat)

-

1

V

IC=500mA, IB=50mA

Base-Emitter voltage

VBE

0.45

-

0.75

V

IC=5mA, VCE=5V

Transition Frequency

fT

20

-

MHz VCE=5V,IC=200mA

Collector Output Capacitance

COB

-

20

pF

VCB=10V, IE=0, f=1MHz

■

Features

●

Small Flat Package

General Purpose Application

1

2

3

■ Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

NPN Transistors

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

■

Classification of hfe

■

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