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WSP4807 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSP4807
подробное описание детали  Dual P-Ch MOSFET
PDF  7 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP4807 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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WSP4807
Page 2
www.winsok.tw
Dec.2014
Dual P-Ch MOSFET
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
---
-0.
---
V/℃
VGS=-10V , ID=-3A
---
33
46
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V , ID=-1.5A
---
53
72
mΩ
VGS(th)
Gate Threshold Voltage
1.0
--1.0
-1.0
-
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
--
4.
---
-
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
--
-
---
-
-1
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=55℃
---
---
-
-5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
-
±
100
nA
gfs
gf
orwar Tr
d ansconductance
VDS=-5V , ID=-3A
---
---
---
5
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
24
48
Ω
Qg
Total Gate Charge (-4.5V)
---
6.2
---
Qgs
Gate-Source Charge
---
2.5
---
Qgd
Gate-Drain Charge
VDS=-20V , VGS=-4.5V , ID=-5A
--
3.3
--
----
-
nC
Td(on)
Turn-On Delay Time
---
9.2
---
Tr
T
Rise ime
---
16.5
---
Td(off)
Turn-Off Delay Time
---
21.3
---
Tf
T
Fall ime
VDD=-15V , VGS=-10V , RG=3.3Ω
ID=-1A
---
---
-
21.5
ns
Ciss
Input Capacitance
---
640
---
Coss
Output Capacitance
--
-
270
---
-
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
---
-
103
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,4
---
---
-6.5
A
ISM
Pulsed Source Current2,4
VG=VD=0V , Force Current
---
---
-
-12
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
---
---
---
---
---



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