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WSP4608 датащи(PDF) 3 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSP4608
подробное описание детали  N-Ch and P-Channel MOSFET
PDF  6 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP4608 датащи(HTML) 3 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP4608 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4608 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4608 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4608 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4608 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4608 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
-34
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.085
---
V/℃
VGS=-10V , ID=-5.6A
---
28
---
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V , ID=-5.05A
---
36
---
mΩ
VGS(th)
Gate Threshold Voltage
---
-1.5
---
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
0.375
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±24V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-10V , ID=-6A
---
12
---
S
Qg
Total Gate Charge (-4.5V)
---
6.4
---
Qgs
Gate-Source Charge
---
2.7
---
Qgd
Gate-Drain Charge
VDS=-20V , VGS=-4.5V , ID=-6A
---
3.1
---
nC
Td(on)
Turn-On Delay Time
---
8
---
Tr
Rise Time
---
16.6
---
Td(off)
Turn-Off Delay Time
---
22
---
Tf
Fall Time
VDD=-15V , VGS=-10V , RG=3Ω,
RL=2.5Ω
---
21.6
---
ns
Ciss
Input Capacitance
---
950
---
Coss
Output Capacitance
---
137
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
118
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
VDD=-25V , L=0.1mH , IAS=-10A
16
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
---
---
-6
A
ISM
Pulsed Source Current2,6
VG=VD=0V , Force Current
---
---
-12
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-6A , TJ=25℃
---
---
-1.2
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
WSP4608
N-Ch and P-Channel MOSFET
Page 3
www.winsok.tw
Dec.2014



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