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WSP4606 датащи(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSP4606
подробное описание детали  N-Ch and P-Channel MOSFET
PDF  8 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP4606 датащи(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Rating
Symbol
Parameter
N-Channel P-Channel
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Sou
rce Voltage
±
20
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
7.0
-6
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1
6
-4
A
IDM
Pulsed Drain Current
2
20
-12
A
EAS
Single Pulse Avalanche Energy
3
72
59
mJ
IAS
Avalanche Current
21
-19
A
PD@TC=25℃
Total Power Dissipation
4
2.5
2.08
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
85
/W
RθJC
Thermal Resistance Junction-Case
1
---
50
/W
BVDSS
RDSON
ID
30V
18mΩ
7A
-30V
30mΩ
-6A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
General Description
Features
Applications
Power management in half bridge and inverters
DC-DC Converter
Load Switch
Absolute Maximum Ratings
Thermal Data
Product Summery
SOP-8 Pin Configuration
The WSP4606 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSP4606 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
WSP4606
N-Ch and P-Channel MOSFET
Page 1
www.winsok.tw
Dec.2014


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