WSP4407 datasheet(1/5 Pages) WIINSOK

номер детали	WSP4407

подробное описание детали	P-Ch MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

домашняя страница	http://www.winsok.tw/index.html

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Sou

rce Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V

1

-1

3

A

ID@TC=70℃

Continuous Drain Current, VGS @ -10V

1

-

10.5

A

IDM

300uS Pulsed Drain Current

2

-

60

A

EAS

Single Pulse Avalanche Energy

3

101

mJ

IAS

Avalanche Current

-

26

A

PD@TA=25℃

Total Power Dissipation

4

3.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

75

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

24

℃

/W

BVDSS

RDSON

ID

-30V

9.6mΩ

-1

3A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOP

-8 Pin Configuration

Product Summery

The WSP4407 is the highest performance trench

P-Ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the synchronous buck converter

applications .

The WSP4407 meet the RoHS and Green

Product requirement , 100% EAS guaranteed

with full function reliability approved.

WSP4407

P-Ch MOSFET

Page 1

www.winsok.tw

Dec.2014

Аналогичный номер детали - WSP4407

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SHENZHEN DOINGTER SEMIC...	WSP4407	2Mb / 7P	P-Channel MOSFET uses advanced trench technology

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Аналогичный номер детали - WSP4407

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