| поискавой системы для электроныых деталей |
|
WSP4404 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
|
|
|||||||||||||||||||||||||||||
WSP4404 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
|
2 / 7 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID= 8.4A --- 17 m Ω VGS=4.5V , ID= 2A --- 33 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.4 1. 9 2.8 V △ VGS(th) VGS(th) Temperature Coefficient --- -5.08 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID= 8.4A --- 22 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 5.2 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID= 8.4A --- 3.7 --- nC Qgs Gate-Source Charge --- 1.6 --- Qgd Gate-Drain Charge --- 1.3 --- Td(on) Turn-On Delay Time VDD=15V , VGS= 10V , RG= 1Ω ,ID=6.7A ,RL=2.2Ω. --- 20 30 ns Tr Rise Time --- 15 25 Td(off) Turn-Off Delay Time --- 11 20 Tf Fall Time --- 10 15 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 405 --- pF Coss Output Capacitance --- 110 --- Crss Reverse Transfer Capacitance --- 56 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS= 10A 5.0 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 4.2 A ISM Pulsed Source Current 2,6 --- --- 40 A VSD Diode Forward Voltage 2 VGS=0V , IS= 6.7A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=6.7A , dI/dt=100A/µs , TJ=25℃ --- 15 --- nS Qrr Reverse Recovery Charge --- 8 --- nC Guaranteed Avalanche Characteristics Diode Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) N-Ch MOSFET WSP4404 Page 2 www.winsok.tw Dec.2014 21 27 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |