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WSG02N20 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSG02N20
подробное описание детали  N-Ch MOSFET
PDF  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSG02N20 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSG02N20 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02N20 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02N20 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02N20 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSG02N20 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
200
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
2A
---
310
410
m
Ω
VGS=
6V , ID=1A
---
314
820
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2.0
2.8
4.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.57
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=2A
---
15
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
---
Ω
Qg
Total Gate Charge (10V)
VDS=
30V , VGS=10V , ID=2A
---
51.7
---
nC
Qgs
Gate-Source Charge
---
12.7
---
Qgd
Gate-Drain Charge
---
16.3
---
Td(on)
Turn-On Delay Time
VDD=
30V , VGEN=10V ,
RG=
4.7Ω ID=1A ,RL=17.7Ω
---
32
50
ns
Tr
Rise Time
---
32.1
51
Td(off)
Turn-Off Delay Time
---
60.9
79
Tf
Fall Time
---
5.2
10
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
---
645
---
pF
Coss
Output Capacitance
---
68
---
Crss
Reverse Transfer Capacitance
---
21
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
2
A
ISM
Pulsed Source Current
2,4
---
---
10
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
1A , TJ=25℃
---
---
1
.15
V
trr
Reverse Recovery Time
IF=
2A,dI/dt=100A/µs , TJ=25℃
---
38
---
nS
Qrr
Reverse Recovery Charge
---
56
---
nC
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
, t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
WSG02N20



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