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WSF30100 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSF30100
подробное описание детали  N-Ch MOSFET
PDF  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF30100 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF30100 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30100 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30100 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30100 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF30100 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
VGS=10V , ID=20A
2.5
3
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=15A
3.2
4
mΩ
VGS(th)
Gate Threshold Voltage
1
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-6.1
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
2
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=55℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forwar Trd ansconductance
VDS=5V , ID=30A
---
60
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.9
1.8
Ω
Qg
Total Gate Charge (4.5V)
---
56.9
---
Qgs
Gate-Source Charge
---
13.8
---
Qgd
Gate-Drain Charge
VDS=15V , VGS=10V , ID=20A
---
23.5
---
nC
Td(on)
Turn-On Delay Time
---
20.1
---
Tr
Rise Time
---
6.3
---
Td(off)
Turn-Off Dela Ty ime
---
124.6
---
Tf
TFall ime
VDD=15V , VGS=10V ,
RG=3.3Ω, ID=1A
---
15.8
---
ns
Ciss
Input Capacitance
---
5935
---
Coss
Output Capacitance
---
725
---
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
538
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
VDD=25V , L=0.1mH , IAS=20A
69
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
---
40
A
ISM
---
---
310
A
VSD
Diode Forward Voltage2
VGS=0V , IS=A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 100A.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25
°C, unless otherwise noted)
Page 2
www.winsok.tw
Dec.2014
---
---
Pulsed Source Current2,6
---
VG=VD=0V , Force Current
WSF30100
N-Ch MOSFET



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