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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSF60P03 датащи(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF60P03 датащи(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page  Symbol Parameter Rating Units 10s Steady State VDS Drain-Source Voltage -30 V VGS Gate-Sou rce Voltage ± 2 0 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V 1 - 60 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V 1 - 50 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V 1 -15 - 10 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V 1 -12 - 8.2 A IDM Pulsed Drain Current 2 -1 40 A EAS Single Pulse Avalanche Energy 3 273 mJ IAS Avalanche Current -50 A PD@TC=25℃ Total Power Dissipation 4 45 W PD@TA=25℃ Total Power Dissipation 4 5 3.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃ /W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 2.8 ℃ /W BVDSS RDSON ID -30V 12mΩ - 60A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO-252 Pin Configuration Product Summery The WSF60P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF60P03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. WSF60P03 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 |
Аналогичный номер детали - WSF60P03 |
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Аналогичное описание - WSF60P03 |
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