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WSF60N06 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSF60N06
подробное описание детали  N-Ch MOSFET
PDF  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF60N06 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF60N06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60N06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60N06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60N06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF60N06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.057
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=20A
---
m
Ω
VGS=4.5V , ID=10A
---
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.
0
1.8
3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.68
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=15A
---
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qg
Total Gate Charge (4.5V)
VDS=
48V , VGS=4.5V , ID=15A
---
9
36
nC
Qgs
Gate-Source Charge
---
4.5
10
Qgd
Gate-Drain Charge
---
7.5
1
5
Td(on)
Turn-On Delay Time
VDD=30V , VGS=10V ,
RG=3.3Ω, ID=
1A ,RL=15Ω.
---
8.2
14.4
ns
Tr
Rise Time
---
5.8
90
Td(off)
Turn-Off Delay Time
---
25
73
Tf
Fall Time
---
8.8
15.2
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
1896
pF
Coss
Output Capacitance
---
125
Crss
Reverse Transfer Capacitance
---
89
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=
28A
45
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
40
A
ISM
Pulsed Source Current
2,6
---
---
90
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
---
21
---
nS
Qrr
Reverse Recovery Charge
---
16
---
nC
Note :
1.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
10
12
12
15
9
N-Ch MOSFET
WSF60N06
Page 2
www.winsok.tw
Dec.2014
The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
IF=1A ,dI/dt=100A/µs,TJ=25℃
---
---
---



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