поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

WSF50P10 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSF50P10
подробное описание детали  P-Ch MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF50P10 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF50P10 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF50P10 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF50P10 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF50P10 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF50P10 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF50P10 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF50P10 Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.021
---
V/℃
VGS=-
4.5V , ID=-10A
---
38
51
m
Ω
VGS(th)
Gate Threshold Voltage
-
1.0
-
2.0
-
3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.08
---
mV/℃
VDS=-
80V , VGS=0V , TJ=25℃
---
---
-1
IDSS
Drain-Source Leakage Current
VDS=-
80V , VGS=0V , TJ=85℃
---
---
-30
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Qge
Total Gate Charge
---
56
---
Qgse
Gate-Source Charge
---
9.5
---
Qgde
Gate-Drain Charge
VDS=-
30V , VGS=-10V , ID=-18A
---
14.5
---
nC
Td(on)e
Turn-On Delay Time
---
17
---
Tre
Rise Time
---
9
---
Td(off)e
Turn-Off Delay Time
---
83
---
Tfe
Fall Time
VDD=-
30V , VGS=-10V ,
RG=
6Ω, ID=-1A ,RL=30Ω.
---
34
---
ns
Cisse
Input Capacitance
---
2480
3207
Cosse
Output Capacitance
---
268
---
Crsse
Reverse Transfer Capacitance
VDS=-
50V , VGS=0V , f=1MHz
---
126
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
---
---
-
18
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1
8A , TJ=25℃
---
---
-1.2
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WSF50P10
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
VGS=-10V , ID=-
18A
---
32
40
RDS(ON)d
Static Drain-Source On-Resistance
Note d：Pulse test ; pulse width£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.
VG=VD=0V , Force Current



Html Pages

1 2 3 4 5 6 7


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com