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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSF7P20 датащи(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF7P20 датащи(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 4 page  Symbol Parameter Rating Units VDS Drain-Source Voltage -200 V VGS Gate-Source Voltage ± 30 V ID Continuous Drain Current -5.7 A -22.8 A IDM -5.7 A EAS 570 mJ IAR PD Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 100 ℃ /W RθJC Thermal Resistance Junction-Case --- 2.27 ℃ /W BVDSS RDSON (MAX.) ID -200V 690mΩ -5.7A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO -252 Pin Configuration Product Summery The WSF7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. They are also well suited for high efficiency switching DC/DC converters. WSF7P20 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 Note:1. 2. 3. 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω ISD≦-7.3A, di/dt≦300A/μs, VDD≦BVDSS Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed Avalanche Energy (Note 3) Repetitive Avalanche Energy (Note 2) EAR 5.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 4) V/ns -5.5 Ta = 25°C |
Аналогичный номер детали - WSF7P20 |
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Аналогичное описание - WSF7P20 |
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