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WSD4038DN датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSD4038DN
подробное описание детали  N-Ch MOSFET
PDF  7 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD4038DN датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSD4038DN Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD4038DN Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD4038DN Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD4038DN Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD4038DN Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD4038DN Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD4038DN Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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N-Ch MOSFET
WSD4038DN
Page 2
www.winsok.tw
Dec.2014
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
V
RDS(ON)
Static Drain-Source On-Resistance
2
---
10.5
13
m
Ω
VGS(th)
Gate Threshold Voltage
1.
5
1.8
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
---
-6.
---
mV/℃
VDS=
32V , VGS=0V , TJ=25℃
--
-
---
-
2
IDSS
Drain-Source Leakage Current
VDS=
32V , VGS=0V , TJ=55℃
---
---
-
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
--
-
---
-
±
100
nA
gfs
gf
orwar Tr
d
ansconductance
VDS=5V , ID=
20A
---
31
---
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.1
1.8
Ω
Qg
Total Gate Charge (10V)
---
20
28
Qgs
Gate-Source Charge
---
3.9
7.5
Qgd
Gate-Drain Charge
VDS=20V, VGS=10V, IDS=7A
---
3.0
5.1
nC
Td(on)
Turn-On Delay Time
---
12.6
16
Tr
Rise Time
---
10
12
Td(off)
Turn-Off Dela T
y ime
---
23.6
32
Tf
T
Fall ime
---
6
9
ns
Ciss
Input Capacitance
1125
Coss
Output Capacitance
132
Crss
Reverse Transfer Capacitance
VDS=
20V , VGS=0V , f=1MHz
70
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
--
---
5
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-
15
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
20A , TJ=25℃
--
-
---
-
1.1
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec .
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
5mH,IAS=13A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is
60A.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
VGS=10V , ID=7A
RDS(ON)
Static Drain-Source On-Resistance
2
---
12
16
VGS=4.5V , ID=5A
mΩ
---
---
VDD=20V, RL=20
3, IDS=1A, VGEN=10V,
RG=1Ω.
S
---
---
---
---
---
---



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