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HM8119 датащи(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM8119 датащи(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 13 page ![]() Standoff 55V 500mA 850KHz Sync Step-Down Regulator Page 4 / 13 Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Thermal Information Item Description Value Unit RθJA Junction-to-ambient thermal resistance (1)(2) 105 °C/W RθJC(top) Junction-to-case (top) thermal resistance 55 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 3.5 °C/W ψJB Junction-to-board characterization parameter 17.5 °C/W Note (1): The package thermal impedance is calculated in accordance to JESD 51-7. Note (2): Thermal Resistances were simulated on a 4-layer, JEDEC board. Electrical Characteristics (1) (2) VIN=12V, TA=25°C, unless otherwise specified. Parameter Test Conditions Min Typ. Max Unit Input Voltage Range 4.5 45 V Supply Current (Quiescent) VEN =3.0V 0.4 0.8 mA Supply Current (Shutdown) VEN =0 or EN = GND 10 uA Feedback Voltage 0.780 0.800 0.820 V 0.746 0.765 0.784 V 0.585 0.600 0.615 V High-Side Switch On-Resistance ISW=100mA 500 mΩ Low-Side Switch On-Resistance ISW=-100mA 300 mΩ Valley Switch Current Limit 1 A Over Voltage Protection Threshold 48 V Switching Frequency 850 KHz Maximum Duty Cycle VFB=90% 89 % Minimum On-Time 83 nS EN Rising Threshold 1.2 V EN Falling Threshold 0.9 V Under-Voltage Lockout Threshold Wake up VIN Voltage 4.2 4.4 V Shutdown VIN Voltage 3.4 3.7 V Hysteresis VIN voltage 500 mV Soft Start 1 mS Thermal Shutdown 150 ℃ Thermal Hysteresis 30 ℃ Note (1): MOSFET on-resistance specifications are guaranteed by correlation to wafer level measurements. Note (2): Thermal shutdown specifications are guaranteed by correlation to the design and characteristics analysis. HM8119A HM8119B HM8119C HM8119 |
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