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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC3243 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.9
W (Tamb=25
℃)
Collector current
ICM:
1
A
Collector-base voltage
V(BR)CBO:
60
V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=
10µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=
2mA, IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=50V, IE=0
0.2
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.2
µA
DC current gain
hFE(1)
VCE=4V, IC=100mA
55
300
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=25mA
0.3
V
Transition frequency
fT
VCE=2V, IC=10mA
80
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
25
pF
CLASSIFICATION OF
hFE(1)
Rank
C
D
E
Range
55-110
90-180
150-300
Marking
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
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