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WSD2018DN22 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSD2018DN22
подробное описание детали  N-Ch MOSFET
PDF  6 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD2018DN22 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSD2018DN22 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2018DN22 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2018DN22 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2018DN22 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2018DN22 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2018DN22 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.02
7
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=
4.5V , ID=5A
---
10
15
m
Ω
VGS=
2.5V , ID=5A
---
13
18
VGS=
1.8V , ID=5A
18
30
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.
4
0.7
1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
2.5
6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±
12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=
4V , ID=9.7A
20
---
---
S
Rg
Gate Resistance
f=1MHz
---
2.5
---
Ω
Qg
Total Gate Charge (4.5V)
VDS=
4V , VGS=5V , ID=10A
---
---
32
nC
Qgs
Gate-Source Charge
---
2.5
---
Qgd
Gate-Drain Charge
---
6.5
---
Td(on)
Turn-On Delay Time
VDD=
4V , VGS=4.5V , RG=1Ω
ID=1
0A ,RL=0.4Ω
---
12
20
ns
Tr
Rise Time
---
10
25
Td(off)
Turn-Off Delay Time
---
65
70
Tf
Fall Time
---
20
60
Ciss
Input Capacitance
VDS=
4V , VGS=0V , f=1MHz
---
1800
---
pF
Coss
Output Capacitance
---
650
---
Crss
Reverse Transfer Capacitance
---
450
---
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Page 2
www.winsok.tw
Dec.2014
WSD2018DN22
N-Ch MOSFET
Notes :
1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper.
2.Surface mounted on FR4 board using the minimum pad size,1oz copper.
3. Pulse test : Pulse width=300μs, duty cycle≤2%.
4. These parameters have no way to verify.



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