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WSD2012DN25 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSD2012DN25
подробное описание детали  N-Ch MOSFET
PDF  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD2012DN25 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSD2012DN25 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2012DN25 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2012DN25 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2012DN25 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD2012DN25 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=
5.5A
5.0
m
Ω
VGS=2.5V , ID=
5.5A
6.8
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.
3
0.
65
1.
0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-2.32
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=10A
---
65
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2500
---
Ω
Qg
Total Gate Charge (4.5V)
VDS=1
0V , VGS=4.5V , ID=5.5A
10
12.5
15
nC
Qgs
Gate-Source Charge
---
5.5
---
Qgd
Gate-Drain Charge
---
6.5
---
Td(on)
Turn-On Delay Time
VDD=10V , VGS=
10V , RG=1Ω,
ID=1A
,RL=10Ω
---
1.1
---
μs
Tr
Rise Time
---
2.6
---
Td(off)
Turn-Off Delay Time
---
7
---
Tf
Fall Time
---
7.4
---
Ciss
Input Capacitance
VDS=1
0V , VGS=0V , f=1MHz
1256
pF
Coss
Output Capacitance
220
Crss
Reverse Transfer Capacitance
168
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
3
A
ISM
Pulsed Source Current
2,4
---
---
45
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
0.58
1.
0
V
trr
Reverse Recovery Time
IF=10A
,dI/dt=500A/µs , TJ=25℃
---
11
---
nS
Qrr
Reverse Recovery Charge
---
15
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper, t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
7.0
9.5
13
9.0
WSD2012DN25
Page 2
www.winsok.tw
Dec.2014
N-Ch MOSFET
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