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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSD30L40DN датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD30L40DN датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.0232 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=- 20A --- 11 14 m Ω VGS=-4.5V , ID=- 10A --- 18 24 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1. 3 -1. 8 - 2.3 V △ VGS(th) VGS(th) Temperature Coefficient --- 4.6 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 9 --- Ω Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=- 20A --- 30 --- nC Qgs Gate-Source Charge --- 1.2 --- Qgd Gate-Drain Charge --- 11 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG= 6Ω ID=-1A ,RL=15Ω --- 11 --- ns Tr Rise Time --- 11 --- Td(off) Turn-Off Delay Time --- 101 --- Tf Fall Time --- 60 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1380 --- pF Coss Output Capacitance --- 280 --- Crss Reverse Transfer Capacitance --- 217 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=-25V , L=0. 5mH , IAS=-18A 78 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- - 20 A ISM Pulsed Source Current 2,6 --- --- - 70 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=- 20A ,dI/dt=100A/µs, T J=25℃ 20 --- nS Qrr Reverse Recovery Charge --- 8 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0. 5mH,IAS=-18A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics Diode Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) WSD30L40DN Page 2 www.winsok.tw Dec.2014 --- - P-Ch MOSFET |
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