EPC2014C datasheet(2/6 Pages) EPC-CO

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eGaN® FET DATASHEET

| 2

EPC2014C

0.5

1.0

1.5

2.0

2.5

3.0

Figure 1: Typical Output Characteristics

VDS – Drain-to-Source Voltage (V)

VGS = 5V

VGS = 4V

VGS = 3V

VGS = 2V

VGS – Gate-to-Source Voltage (V)

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Figure 3: RDS(on) vs. VGS for Various Drain Currents

ID = 5 A

ID = 10 A

ID = 15 A

ID = 30 A

VGS – Gate-to-Source Voltage (V)

1.0

0.5

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Figure 2: Transfer Characteristics

25˚C

125˚C

VDS = 3 V

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Figure 4: RDS(on) vs. VGS for Various Temperatures

25˚C

125˚C

ID = 10 A

VGS – Gate-to-Source Voltage (V)

Dynamic Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VDS = 20 V, VGS = 0 V

220

300

CRSS

Reverse Transfer Capacitance

6.5

9.5

COSS

Output Capacitance

150

210

Gate Resistance

0.4

Total Gate Charge

VDS = 20 V, VGS = 5 V, ID = 10 A

2.5

QGS

Gate-to-Source Charge

VDS = 20 V, ID = 10 A

0.7

QGD

Gate-to-Drain Charge

0.3

0.5

QG(TH)

Gate Charge at Threshold

0.5

QOSS

Output Charge

VDS = 20 V, VGS = 0 V

QRR

Source-Drain Recovery Charge

All measurements were done with substrate connected to source.

Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.

Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.

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