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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDA7786 датащи(PDF) 38 Page - STMicroelectronics |
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TDA7786 датащи(HTML) 38 Page - STMicroelectronics |
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38 / 54 page  Electrical specifications TDA7786, TDA7786M 38/54 DocID026122 Rev 5 Strong signal interferer (2) SNR ∆F = ±400 kHz desired = 40 dBµV undesired = 110 dBµV, m = 30 %, 1 kHz 511 - dB Strong signal interferer (2) suppression ∆F = ±400 kHz desired = 40 dBµV undesired = 110 dBµV, m = 30 %, 1 kHz -15 18 dB Strong signal interferer (2) cross-modulation ∆F = ±400 kHz desired = 80 dBµV undesired = 110 dBµV, m = 30 %, 1 kHz maximum SNR of undesired channel -1 4 dB Max. strong signal interferer Desired = 40 dBµV SINAD = 26dB, blocking<6dB Undesired ∆F = 400 kHz, m = 30 % (crossmod. Test) 90 98 - dBµV Image rejection - 60 80 - dB Logarithmic field strength indicator @60 dBµV read "AM_SMeter_log" -0.47 (equiva lent to 57 dBµV -0.44 -0.41 (equiv alent to 63 dBµV) - 1. Programmable by software parameters. Table 27. AM MW overall system performance (continued) Parameter Test condition Min Typ Max Units |
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