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E8N60 датащи(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

номер детали E8N60
подробное описание детали  8A 600V N-channel Enhancement Mode Power MOSFET
PDF  12 Pages
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производитель  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
домашняя страница  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

E8N60 датащи(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 12
8N60
4.2 Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance Junction to Case-sink
RthJC
1.14
℃/W
Thermal Resistance Junction to Ambient
RthJA
62.5
℃/W
4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Condition
Value
Units
Min
Typ
Max
Off Characteristics
Drain-source
Breakdown
Voltage
BVDSS
ID=250μA,VGS=0V
600
--
--
V
Drain-to-Source
Leakage
Current
IDSS
VDS=600V,VGS=0V,TC=25℃
--
--
1
μA
VDS=480V,VGS=0V,TC=125℃
--
--
100
μA
Gate-to-Source
Forward
Leakage
IGSSF
VGS=+30V
--
--
100
nA
Gate-to-Source
Reverse
Leakage
IGSSR
VGS=-30V
--
--
-100
nA
On Characteristics
(Note 5)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
--
4
V
Drain-source on
Resistance
RDS(on)
VGS=10V,ID=4A
--
0.8
1.2
Ω
Dynamic Characteristics
(Note 6)
Forward Transfer
Conductance
gfs
VDS=15V,ID=4A
--
7
--
S
Input Capacitance
Ciss
VGS=0V,VDS=25V,f=1.0MHz
--
1253
--
pF
Output Capacitance
Coss
--
115
--
Reverse Transfer
Capacitance
Crss
--
15
--
Switching Characteristics
(note6)
Turn-on Delay Time
td(on)
ID=8A,
VDD=300V,
RG=9.1Ω
--
13
--
nS
Turn-on Rise Time
tr
--
15
--
nS
Turn-off Delay Time
td(off)
--
41
--
nS
Turn-off Fall Time
tf
--
21
--
nS
Total Gate Charge
Qg
ID=8A,VDD=300V,VGS=10V
--
29
--
nC
Gate-to-Source Charge
Qgs
--
7
--
Gate-to-Drain(“Miller”)
Charge
Qgd
--
12
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=8A
--
--
1.5
V
Diode Forward Current
(Note 2)
IS
--
--
8
A



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