PEMB14 datasheet(4/10 Pages) PHILIPS

номер детали	PEMB14

подробное описание детали	PNP/PNP resistor-equipped transistors; R1 = 47 kohm, R2 = open

PDF	10 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 10 page

9397 750 14405

Product data sheet

Rev. 01 — 17 February 2005

4 of 10

Philips Semiconductors

PEMB14; PUMB14

PNP/PNP resistor-equipped transistors; R1 = 47 k

Ω, R2 = open

Characteristics

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −50 V; IE = 0 A

−100

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB = 0 A

−1

µA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

−100

hFE

DC current gain

VCE = −5 V; IC = −1 mA

100

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

−150

bias resistor 1 (input)

Ω

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

2.5

VCE = −5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa206

100

1000

hFE

IC (mA)

−10−1

−102

−10

−1

(1)

(2)

(3)

006aaa207

IC (mA)

−10−1

−102

−10

−1

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

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