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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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1SS181 датащи(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1SS181 датащи(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  Features • Low forward voltage • Fast reverse recovery time • Small total capacitance Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Rectified Forward Current IF(AV) 100 mA Maximum Peak Forward Current IFM 300 mA Non-repetitive Peak Forward Surge Current (10 ms) IFSM 2 A Power Dissipation Ptot 350 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 55 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 30 V at VR = 80 V IR 0.1 0.5 µA Total Capacitance at VR = 0 , f = 1 MHz CT 4 pF Reverse Recovery Time at IF = 10 mA trr 4 ns 2 1 3 1SS181 Silicon Epitaxial Planar Switching Diode SOT-23 1.Cathode 2.Cathode 3.Anode Marking : A1 1 / 3 www.pingjingsemi.com Revis ion：1.0 Oct-2019 |
Аналогичный номер детали - 1SS181 |
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Аналогичное описание - 1SS181 |
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