FCX593 datasheet(2/4 Pages) PJSEMI

номер детали	FCX593

подробное описание детали	PNP Transistor

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Revison：1.0 Apr - 2019

Parameter

Symbol

Min.

Typ.

Max.

Units

hFE

100

300

Collector Base Cutoff Current

at -VCB = 100 V

-ICBO

0.1

μA

Emitter Base Cutoff Current

at -VEB = 4 V

-IEBO

0.1

μA

Collector Base Breakdown Voltage

at -IC = 100 µA

-V(BR)CBO

120

Collector Emitter Breakdown Voltage

at -IC = 10 mA

-V(BR)CEO

100

Emitter Base Breakdown Voltage

at -IE = 100 µA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 250 mA, -IB = 25 mA

at -IC = 500 mA, -IB = 50 mA

-VCE(sat)

0.2

Base Emitter Voltage

at -VCE = 5 V, -IC = 1 mA

-VBE

Transition Frequency

at -VCE = 10 V, -IC = 50 mA, f = 100 MHz

MHz

Electrical Characteristics (Ta=25℃ unless otherwise specified)

DC Current Gain

at -VCE = 5 V, -IC = 1 mA

at -VCE = 5 V, -IC = 250 mA

at -VCE = 5 V, -IC = 500 mA

at -VCE = 5 V, -IC = 1 A

Base Emitter Saturation Voltage

at -IC = 500 mA, -IB = 50 mA

-VBE(sat)

1.1

0.3

FCX593

PNP Transistor

Output Capacitance

at -VCB = 10 V, - f = 1 MHz

Cob

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